to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors MPSA05 transistor (npn) features z general purpose amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 4 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a collector cut-off current i ceo v ce =60v,i b =0 0.1 a emitter cut-off current i ebo v eb =3v,i c =0 1 a h fe(1) v ce =1.0v, i c =100ma 100 dc current gain h fe(2) v ce =1.0v, i c =10ma 100 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v base-emitter voltage v be i c =100ma, v ce =1.0v 1.2 v transition frequency f t v ce =2.0v,i c =10ma,f=100mhz 100 mhz symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 4 v i c collector current 0.5 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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